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Accueil > Productions scientifiques > Articles > Publiés > Pulse Height Defect in the passivated ion-implanted Si detectors of the INDRA array

Pulse Height Defect in the passivated ion-implanted Si detectors of the INDRA array

G. Tabacaru et al

Nucl. Inst. and Meth. A 428 (1999) 379

Preprint

The pulse-height defect (PHD) of 36Ar, 58Ni, 129Xe, 181Ta and 197Au ions in the 180 passivated ion-implanted silicon detectors of the INDRA array has been measured. The detectors faced the target with the low electric field side. The charge encoding ensured a low ballistic deficit. Detectors with the same nominal characteristics and electric field strength show a PHD dependence on the individual silicon wafer. They are classified and calibrated by using an empirical parametrization which relates the PHD to the total energy through a Z-depending power law. A PHD analytical formula, based on a simple recombination model, is also proposed. It considers a realistic charge density variation with the position coordinate on the ion path. This new formula is successfully confronted to some experimental data.

Collaboration(s)

INDRA